Structural study of disordered SiC nanowires by three-dimensional rotation electron diffraction
نویسندگان
چکیده
The structure of disordered SiC nanowires was studied by using the threedimensional rotation electron diffraction (RED) technique. The streaks shown in the RED images indicated the stacking faults of the nanowire. High-resolution transmission electron microscopy imaging was employed to support the results from the RED data. It suggested that a 2H polytype is most possible for the nanowires.
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تاریخ انتشار 2014